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DMN2019UTS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Units
V
V
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 5)
V GS = 10V
V GS = 2.5V
Steady
State
Steady
State
T A = +25 ° C
T A = +70 ° C
T A = +25 ° C
T A = +70 ° C
I D
I D
5.4
4.3
4.6
3.7
A
A
Continuous Body Diode Forward Current (Note 5)
Steady
Stat
T A = +25 ° C
I S
0.9
A
Pulsed Drain Current (Note 5) 10 μ s pulse, duty cycle = 1%
I DM
30
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
R θ JC
T J, T STG
Value
0.78
161
26
-55 to +150
Units
W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage
BV DSS
I DSS
I GSS
BV SGS
20
-
-
±12
-
-
-
-
-
1.0
10
-
V
μA
μA
V
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±10V, V DS = 0V
V DS = 0V, I G = ±250 μ A
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.35
-
0.95
V
V DS = V GS , I D = 250 μ A
-
-
-
15.5
16.5
17
18.5
21
21.5
V GS = 10V, I D = 7A
V GS = 4.5V, I D = 7A
V GS = 4.0V, I D = 7A
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
R DS (ON)
|Y fs |
V SD
-
-
-
-
-
-
17.5
18
19
24
13
0.7
22.5
23
24
31
-
1.0
m ?
S
V
V GS = 3.6V, I D = 6.5A
V GS = 3.1V, I D = 6.5A
V GS = 2.5V, I D = 5.5A
V GS = 1.8V, I D = 3.5A
V DS = 5V, I D = 5A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
143
74
29
202
8.8
1.4
3.0
53
78
562
234
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 6.5A
V DD = 10V, V GS = 4.5V,
R L = 10 ? , R G = 6 ?
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2019UTS
Document number: DS35556 Rev. 2 - 2
2 of 6
www.diodes.com
December 2012
? Diodes Incorporated
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